PART |
Description |
Maker |
HY57V641620HGT-6I HY57V641620HGT-7I HY57V641620HGT |
SDRAM - 64Mb 4 Banks x 1M x 16Bit Synchronous DRAM 4M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO54 4 Banks x 1M x 16Bit Synchronous DRAM 4M X 16 SYNCHRONOUS DRAM, 5 ns, PDSO54 x16 SDRAM x16内存 4 Banks x 1M x 16Bit Synchronous DRAM 4M X 16 SYNCHRONOUS DRAM, 4.5 ns, PDSO54 CAP 0.01UF 50V 10% X7R SMD-0805 TR-13 PLATED-NI/SN Ceramic Multilayer Capacitor; Capacitance:10000pF; Capacitance Tolerance: /- 10 %; Working Voltage, DC:50V; Dielectric Characteristic:X7R; Package/Case:0805; Series:MLCC; Dielectric Material:Ceramic; Leaded Process Compatible:Yes CAP SMD 0805 .01UF 50V 5% CONNECTOR ACCESSORY From old datasheet system
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Hynix Semiconductor, Inc. Hynix Semiconductor Inc. HYNIX[Hynix Semiconductor]
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TTS3816B4E-7 TTS3816B4E TTS3816B4E-6 TTS3816B4E-6A |
2M x 16Bit x 4 Banks synchronous DRAM
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Electronic Theatre Controls, Inc. ETC[ETC] List of Unclassifed Manufacturers
|
K4S281632E-TC7C K4S281632E-TL7C |
2M x 16bit x 4 banks synchronous DRAM LVTTL, 133MHz
|
Samsung Electronic
|
K4S28163LD-RFR |
2M x 16Bit x 4 Banks SDRAM in 54CSP Data Sheet
|
Samsung Electronic
|
K4S561633C-RLN |
4M x 16Bit x 4 Banks Synchronous DRAM in 54CSP Data Sheet
|
Samsung Electronic
|
K4S161622D-TC/L10 K4S161622D-TC/L55 K4S161622D-TC/ |
512K x 16Bit x 2 Banks Synchronous DRAM 12k × 16 × 2银行同步DRAM
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD.
|
K4S511533F K4S511533F-YC K4S511533F-F1H K4S511533F |
8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA 8米16 × 4银行4FBGA移动SDRAM
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Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
KM416S8030BN-G_FL KM416S8030BN KM416S8030BN-G_FH K |
128Mb SDRAM Shrink TSOP 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
|
SAMSUNG[Samsung semiconductor]
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K4M51163LENBSP K4M51163LE K4M51163LE-F K4M51163LE- |
8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA 8米16 × 4银行4FBGA移动SDRAM From old datasheet system
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Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
K4M51163LC-RN75 K4M51163LC-RG75 K4M51163LC-RF1H K4 |
32M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
K4M28163LF K4M28163LF-C K4M28163LF-L K4M28163LF-N |
2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA 200万16 × 4银行4FBGA移动SDRAM 8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA54
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SAMSUNG[Samsung semiconductor] Samsung Electronic SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
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